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硒化物晶体

  • In2Se3 crystals 三硒化二铟晶体
  • In2Se3 crystals 三硒化二铟晶体
In2Se3 crystals 三硒化二铟晶体In2Se3 crystals 三硒化二铟晶体

In2Se3 crystals 三硒化二铟晶体

In2Se3 single crystals were grown using Physical vapor transport (PVT) as well as Bridgman technique. Unlike other In2Se3, the phase of this product is controlled carefully by after meticulous synthesis refinement steps and the flakes are highly crystalline. Alpha-phase is the most stable form of In2Se3 making it ideal for 2D research. Flakes are perfectly layered, in-plane sheets are perfectly aligned in the (002) direction as determined by XRD and 4-angle XRD (rocking curves). In the bulk, the crystals display 1.41 eV band gap and show strong Raman peaks.

Properties of In2Se3 layered crystals

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