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碲化物晶体

  • 二碲化铪晶体(99.995%) HfTe2(Hafnium Telluride)
  • 二碲化铪晶体(99.995%) HfTe2(Hafnium Telluride)
  • 二碲化铪晶体(99.995%) HfTe2(Hafnium Telluride)
  • 二碲化铪晶体(99.995%) HfTe2(Hafnium Telluride)
二碲化铪晶体(99.995%) HfTe2(Hafnium Telluride)二碲化铪晶体(99.995%) HfTe2(Hafnium Telluride)二碲化铪晶体(99.995%) HfTe2(Hafnium Telluride)二碲化铪晶体(99.995%) HfTe2(Hafnium Telluride)

二碲化铪晶体(99.995%) HfTe2(Hafnium Telluride)

二碲化铪晶体 HfTe2(Hafnium Telluride)
晶体尺寸:~10毫米
电学性能:半金属
晶体结构:六边形
晶胞参数:a = b = 0.395 nm, c = 0.666 nm, α = β = 90°, γ = 120°
晶体类型:合成
晶体纯度:>99.995%


X-ray diffraction on a HfTe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 6 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4, 5, 6


Powder X-ray diffraction (XRD) of a single crystal . X-ray diffraction was performed at room temperature using a D8 Venture Bruker.


Stoichiometric analysis of a single crystal by Energy-dispersive X-ray spectroscopy (EDX).


Raman spectrum of a single crystal . Measurement was performed with a 785 nm Raman system at room temperature.

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